1 elm34405aa - n 4 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient steady-state r ja 5 0 c /w parameter symbol limit unit note drain - s ource voltage vds - 40 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id -5.5 a t a = 70 c -4.5 pulsed d rain current idm - 2 0 a 3 power dissipation t c = 25 c pd 2.5 w t c = 70 c 1.3 j unction and storage temperature range tj , tstg - 55 to 150 c elm34405aa - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds =- 40 v ? id = - 5 .5 a ? rds (on) < 55 m (vgs =- 10 v) ? rds (on) < 94 m (vgs =- 4 .5v) pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain single p-channel mosfet s g d 4 3 2 1 5 6 7 8 t a = 25 c . u nless otherwise noted.
2 elm34405aa - n 4 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id =- 25 0 a , vgs = 0v - 40 v zero g ate voltage drain current idss vds =- 32 v, vgs = 0v -1 a vds =- 3 0 v, vgs = 0v, t a = 12 5 c -10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 25 0 n a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -1.0 -1.5 -2.5 v on s tate drain current i d ( on ) vgs =- 10 v, vds =- 5v - 2 0 a 1 static drain - s ource on - r esistance r d s (o n ) vgs =- 10 v, i d =- 5 .5 a 38 55 m 1 vgs =- 4 .5v, id =- 4 .5 a 65 94 forward transconductance gfs vds =-1 0 v, id = - 5 .5 a 11 s 1 diode forward voltage vsd i s = if , vgs = 0v -1 v 1 max. body - d iode continuous c urrent is -1.3 a pulsed body - d iode c urrent ism -2.6 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds =- 1 0 v, f = 1mh z 690 pf output capacitance c oss 310 pf reverse transfer capacitance c r ss 75 pf switching parameters total gate charge q g vgs =- 10 v, vds =- 2 0 v id = - 5 .5 a 14.0 nc 2 gate - s ource charge q gs 2.2 nc 2 gate - d rain charge q gd 1.9 nc 2 turn - o n delay time t d (on) vgs =- 10 v, vds =- 20 v id = - 1 a , rgen = 6 6.7 13.4 ns 2 turn - o n rise t ime t r 9.7 19.4 ns 2 turn - o ff delay time t d ( of f ) 19.8 35.6 ns 2 turn - o ff fall t ime t f 12.3 22.2 ns 2 body diode reverse recovery time trr if=-5a, dif/dt=100a/ s 15.5 ns body diode reverse recovery charge q rr if=-5a, dif/dt=100a/ s 7.9 n c single p-channel mosfet note : 1. pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. t a = 25 c . u nless otherwise noted.
3 elm34405aa - n 4 - typical electrical and thermal characteristics p-channel logic level enhancement mode field effect transistor p5504evg sop-8 lead-free niko-sem 3 sep-30-2004 25 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125 c 1.0 0.8 1.2 -55 c 1.4 single p-channel mosfet
4 elm34405aa - n 4 - p-channel logic level enhancement mode field effect transistor p5504evg sop-8 lead-free niko-sem 4 sep-30-2004 single p-channel mosfet
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